Reduction of Gallium Vacancy Concentration in Gallium Nitride Grown with Preheated Ammonia

Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes

Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodolumines...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Carrier Localization in Gallium Nitride

In wide bandgap GaN a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 1019 to 1020 cm-3 in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models a nitrogen vacancy acts as a donor but its...

Ultralow wear of gallium nitride

Development of Gallium Nitride Substrates

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...